SI1034CX-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

43pF @ 10V

Max Power Dissipation :

220mW

Turn-Off Delay Time :

26 ns

Radiation Hardening :

No

Mount :

Surface Mount

Terminal Form :

Flat

Published :

2016

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Turn On Delay Time :

11 ns

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

610mA

Rds On (Max) @ Id, Vgs :

396m Ω @ 500mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

610mA Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

11 ns

Rise Time :

16ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 8V

Power Dissipation :

220mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Series :

TrenchFET®

Number of Elements :

2

Gate to Source Voltage (Vgs) :

8V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE