SI1033X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

250mW

Rds On (Max) @ Id, Vgs :

8Ohm @ 150mA, 4.5V

Drain to Source Resistance :

8Ohm

Max Operating Temperature :

150°C

Turn-Off Delay Time :

60 ns

Fall Time (Typ) :

30 ns

Weight :

32.006612mg

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

145mA

Rise Time :

30ns

Drain to Source Breakdown Voltage :

-20V

Min Operating Temperature :

-55°C

FET Feature :

Logic Level Gate

Length :

1.7mm

Continuous Drain Current (ID) :

-500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Width :

1.2mm

Element Configuration :

Dual

Power Dissipation :

280mW

Number of Channels :

2

Height :

600μm

Max Power Dissipation :

250mW

Rds On Max :

8 Ω

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

FET Type :

2 P-Channel (Dual)

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Published :

2016

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Base Part Number :

SI1033

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Gate to Source Voltage (Vgs) :

5V

Turn On Delay Time :

55 ns

Supplier Device Package :

SC-89-6