SI1025X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Pbfree Code :

yes

ECCN Code :

EAR99

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-563, SOT-666

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

4 Ω @ 500mA, 10V

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Drain Current-Max (Abs) (ID) :

0.19A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-60V

Width :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

250mW

Resistance :

4Ohm

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

Pin Count :

3

Radiation Hardening :

No

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 15V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

190mA

JESD-609 Code :

e3

Weight :

32.006612mg

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-2V

Power Dissipation :

250mW

Lead Free :

Lead Free

Element Configuration :

Dual

Continuous Drain Current (ID) :

-500mA

Length :

1.7mm

Additional Feature :

LOW THRESHOLD

Factory Lead Time :

14 Weeks

Published :

2016

Base Part Number :

SI1025

Height :

600μm