SI1025X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

1.2mm

Number of Elements :

2

Power - Max :

250mW

Rds On (Max) @ Id, Vgs :

4Ohm @ 500mA, 10V

Package / Case :

SOT-563, SOT-666

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

23pF

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Number of Pins :

6

Base Part Number :

SI1025

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On Max :

4 Ω

Drain to Source Breakdown Voltage :

-60V

Power Dissipation :

250mW

REACH SVHC :

No SVHC

Height :

600μm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Continuous Drain Current (ID) :

500mA

Threshold Voltage :

-3V

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

60V

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

8Ohm

Radiation Hardening :

No

Number of Channels :

2

Resistance :

4Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 15V

Length :

1.7mm

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

190mA

Weight :

32.006612mg

FET Type :

2 P-Channel (Dual)

Supplier Device Package :

SC-89-6

Element Configuration :

Dual

Max Power Dissipation :

250mW