SI1024X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Height :

600μm

REACH SVHC :

Unknown

Number of Pins :

6

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.485A

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Factory Lead Time :

14 Weeks

Length :

1.7mm

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Series :

TrenchFET®

Max Power Dissipation :

250mW

Number of Channels :

1

Contact Plating :

Tin

Power Dissipation :

250mW

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

600mA

Drain to Source Breakdown Voltage :

20V

Resistance :

700mOhm

Current - Continuous Drain (Id) @ 25°C :

485mA

Number of Terminations :

6

Threshold Voltage :

450mV

Pin Count :

6

Weight :

8.193012mg

Radiation Hardening :

No

Width :

1.2mm

Gate to Source Voltage (Vgs) :

6V

Additional Feature :

LOW THRESHOLD

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

JESD-609 Code :

e3

ECCN Code :

EAR99

Base Part Number :

SI1024

Vgs(th) (Max) @ Id :

900mV @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON