SI1023X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PDSO-F6

REACH SVHC :

Unknown

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Width :

1.2mm

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Package / Case :

SOT-563, SOT-666

Continuous Drain Current (ID) :

-350mA

FET Type :

2 P-Channel (Dual)

Power Dissipation :

250mW

Current - Continuous Drain (Id) @ 25°C :

370mA

Weight :

8.193012mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Number of Pins :

3

Threshold Voltage :

-450mV

Height :

600μm

Additional Feature :

LOW THRESHOLD

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Resistance :

1.2Ohm

Transistor Element Material :

SILICON

Number of Terminations :

6

ECCN Code :

EAR99

Number of Elements :

2

Series :

TrenchFET®

Base Part Number :

SI1023

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Pin Count :

6

JESD-609 Code :

e3

Terminal Form :

Flat

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Length :

1.7mm

Max Power Dissipation :

250mW

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE