SI1023X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Number of Pins :

6

Mounting Type :

Surface Mount

Published :

2016

Continuous Drain Current (ID) :

-350mA

Weight :

8.193012mg

Max Operating Temperature :

150°C

Rise Time :

14ns

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Power Dissipation :

250mW

Min Operating Temperature :

-55°C

Package / Case :

SOT-563, SOT-666

Supplier Device Package :

SC-89-6

Height :

600μm

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Lead Free :

Lead Free

Series :

TrenchFET®

Rds On Max :

1.2 Ω

Width :

1.2mm

FET Type :

2 P-Channel (Dual)

Drain to Source Resistance :

2.7Ohm

Resistance :

1.2Ohm

Nominal Vgs :

-450 mV

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Fall Time (Typ) :

46 ns

Base Part Number :

SI1023

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

370mA

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 350mA, 4.5V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Length :

1.7mm

Operating Temperature :

-55°C~150°C TJ

Power - Max :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Gate to Source Voltage (Vgs) :

6V

Drain to Source Breakdown Voltage :

-20V

FET Feature :

Logic Level Gate