SI1016X-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

700mOhm

Radiation Hardening :

No

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Series :

TrenchFET®

Terminal Form :

Flat

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Base Part Number :

SI1016

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

485mA

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Additional Feature :

LOW THRESHOLD

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Terminations :

6

Number of Elements :

2

Package / Case :

SOT-563, SOT-666

Height :

600μm

Mounting Type :

Surface Mount

Power Dissipation :

250mW

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2016

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Power Dissipation :

250mW

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

Length :

1.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

32.006612mg

Width :

1.2mm

Drain Current-Max (Abs) (ID) :

0.485A

Gate to Source Voltage (Vgs) :

6V

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Terminal Position :

Dual

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

485mA 370mA

Rds On (Max) @ Id, Vgs :

700m Ω @ 600mA, 4.5V

Transistor Element Material :

SILICON