SI1016X-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

0.75nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Height :

600μm

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

250mW

Length :

1.7mm

Package / Case :

SOT-563, SOT-666

Rds On (Max) @ Id, Vgs :

700mOhm @ 600mA, 4.5V

Base Part Number :

SI1016

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Width :

1.2mm

Number of Channels :

2

Series :

TrenchFET®

Weight :

32.006612mg

Dual Supply Voltage :

20V

Mount :

Surface Mount

Rds On Max :

700 mΩ

Number of Pins :

6

Resistance :

1.2Ohm

Nominal Vgs :

800 mV

Continuous Drain Current (ID) :

600mA

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Operating Temperature :

150°C

Drain to Source Resistance :

1.2Ohm

Supplier Device Package :

SC-89-6

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

485mA 370mA

Operating Temperature :

-55°C~150°C TJ

Power - Max :

250mW

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Threshold Voltage :

800mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Published :

2016

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

6V