SCT3060ALGC11
- Mfr.Part #
- SCT3060ALGC11
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SICFET N-CH 650V 39A TO247N
- Stock
- 34,347
- In Stock :
- 34,347
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Continuous Drain Current (ID) :
- 39A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds :
- 852pF @ 500V
- Threshold Voltage :
- 2.7V
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 175°C
- Number of Terminations :
- 3
- Turn On Delay Time :
- 19 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Vgs (Max) :
- +22V, -4V
- Power Dissipation :
- 165W
- Pulsed Drain Current-Max (IDM) :
- 97A
- Published :
- 2016
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5.6V @ 6.67mA
- Mounting Type :
- Through Hole
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.078Ohm
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 34 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Operating Temperature :
- 175°C TJ
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 21 Weeks
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 13A, 18V
- Package / Case :
- TO-247-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 18V
- Number of Elements :
- 1
- Power Dissipation-Max :
- 165W Tc
- Height :
- 25.5mm
- Drain to Source Breakdown Voltage :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Datasheets
- SCT3060ALGC11

N-Channel Tube 78m Ω @ 13A, 18V +22V, -4V 852pF @ 500V 58nC @ 18V TO-247-3
SCT3060ALGC11 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 852pF @ 500V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 39A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 34 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 97A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.7V threshold voltage. By using drive voltage (18V), this device helps reduce its overall power consumption.
SCT3060ALGC11 Features
a continuous drain current (ID) of 39A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 34 ns
based on its rated peak drain current 97A.
a threshold voltage of 2.7V
SCT3060ALGC11 Applications
There are a lot of ROHM Semiconductor
SCT3060ALGC11 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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