S29GL256P11FFIV12

Manufacturer :

Infineon Technologies

Product Category :

Memory

Series :

GL-P

Number of Sectors/Size :

256

JESD-609 Code :

e1

Write Cycle Time - Word, Page :

110ns

Standby Current-Max :

0.000005A

Ready/Busy :

yes

Programming Voltage :

3V

Factory Lead Time :

16 Weeks

Operating Temperature :

-40°C~85°C TA

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Access Time (Max) :

110 ns

Terminal Pitch :

1mm

Memory Format :

Flash

HTS Code :

8542.32.00.51

Peak Reflow Temperature (Cel) :

260

Page Size :

8/16words

Published :

2003

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage :

3V

Number of Pins :

64

Sector Size :

128K

Supply Voltage-Min (Vsup) :

2.7V

Organization :

256MX1

Power Supplies :

1.8/3.33/3.3V

Memory Size :

256Mb 32M x 8

Memory Type :

Non-Volatile

Memory Interface :

Parallel

Toggle Bit :

yes

Radiation Hardening :

No

Density :

256 Mb

ECCN Code :

3A991.B.1.A

Surface Mount :

yes

Alternate Memory Width :

8

Supply Current-Max :

0.11mA

Voltage - Supply :

1.65V~3.6V

Number of Terminations :

64

Memory Width :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

64-LBGA

Data Polling :

yes

Height Seated (Max) :

1.4mm

Width :

11mm

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Command User Interface :

yes

Length :

13mm

Terminal Position :

BOTTOM

Common Flash Interface :

yes

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount