S29GL01GP11TFCR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Published :

2012

Radiation Hardening :

No

Data Bus Width :

8B

Height Seated (Max) :

1.2mm

Access Time (Max) :

110 ns

Length :

18.4mm

Organization :

1GX1

Packaging :

Tray

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.51

Contact Plating :

Tin

Memory Format :

Flash

Page Size :

8/16words

ECCN Code :

3A991.B.1.A

Alternate Memory Width :

8

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Command User Interface :

yes

Terminal Position :

Dual

Standby Current-Max :

0.000005A

Nominal Supply Current :

110mA

Number of Sectors/Size :

1k

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

3V

Number of Pins :

56

Supply Voltage :

3.3V

Data Polling :

yes

Density :

1 Gb

Memory Width :

1

Programming Voltage :

3V

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Supply :

3V~3.6V

Operating Supply Voltage :

3.3V

Number of Terminations :

56

Mounting Type :

Surface Mount

Series :

GL-P

Memory Size :

1Gb 128M x 8

Mount :

Surface Mount

Common Flash Interface :

yes

Operating Temperature :

0°C~85°C TA

Terminal Pitch :

0.5mm

Write Cycle Time - Word, Page :

110ns

Sync/Async :

ASYNCHRONOUS

Memory Type :

Non-Volatile

Toggle Bit :

yes

Supply Voltage-Max (Vsup) :

3.6V

Sector Size :

128K

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Ready/Busy :

yes