S29GL01GP11FFCR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Programming Voltage :

3V

Sector Size :

128K

HTS Code :

8542.32.00.51

Command User Interface :

yes

Packaging :

Tray

ECCN Code :

3A991.B.1.A

Standby Current-Max :

0.000005A

Number of Sectors/Size :

1k

Memory Size :

1Gb 128M x 8

Series :

GL-P

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

JESD-609 Code :

e1

Ready/Busy :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Write Cycle Time - Word, Page :

110ns

Data Bus Width :

8B

Memory Type :

Non-Volatile

Peak Reflow Temperature (Cel) :

260

Memory Interface :

Parallel

Nominal Supply Current :

110mA

Terminal Position :

BOTTOM

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3.3V

Number of Pins :

64

Published :

2012

Memory Format :

Flash

Organization :

1GX1

Page Size :

8/16words

Height Seated (Max) :

1.4mm

Sync/Async :

ASYNCHRONOUS

Contact Plating :

Copper, Silver, Tin

Terminal Pitch :

1mm

Common Flash Interface :

yes

Access Time (Max) :

110 ns

Mounting Type :

Surface Mount

Data Polling :

yes

Memory Width :

1

Number of Terminations :

64

Alternate Memory Width :

8

Length :

13mm

Operating Temperature :

0°C~85°C TA

Voltage - Supply :

3V~3.6V

Toggle Bit :

yes

Density :

1 Gb

Package / Case :

64-LBGA

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage-Min (Vsup) :

3V

Power Supplies :

3.3V

REACH SVHC :

No SVHC