S29GL01GP11FFCR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Voltage - Supply :

3V~3.6V

Height Seated (Max) :

1.4mm

Memory Interface :

Parallel

Memory Format :

Flash

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Programming Voltage :

3V

Operating Temperature :

0°C~85°C TA

HTS Code :

8542.32.00.51

Number of Terminations :

64

Supply Voltage-Min (Vsup) :

3V

Sector Size :

128K

Power Supplies :

3.3V

Nominal Supply Current :

110mA

Radiation Hardening :

No

Data Polling :

yes

Standby Current-Max :

0.000005A

Published :

2012

Memory Width :

1

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Alternate Memory Width :

8

Terminal Pitch :

1mm

Command User Interface :

yes

Memory Type :

Non-Volatile

Data Bus Width :

8B

Memory Size :

1Gb 128M x 8

Package / Case :

64-LBGA

Supply Voltage :

3.3V

Sync/Async :

ASYNCHRONOUS

Page Size :

8/16words

Length :

13mm

Organization :

1GX1

Mounting Type :

Surface Mount

Number of Sectors/Size :

1k

Density :

1 Gb

Series :

GL-P

REACH SVHC :

No SVHC

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Ready/Busy :

yes

ECCN Code :

3A991.B.1.A

Number of Functions :

1

Packaging :

Tray

Supply Voltage-Max (Vsup) :

3.6V

Write Cycle Time - Word, Page :

110ns

Contact Plating :

Copper, Silver, Tin

Common Flash Interface :

yes

Mount :

Surface Mount

Access Time (Max) :

110 ns

Toggle Bit :

yes

Number of Pins :

64