S29GL01GP11FFIR23

Manufacturer :

Infineon Technologies

Product Category :

Memory

HTS Code :

8542.32.00.51

Page Size :

8/16words

Memory Format :

Flash

Package / Case :

64-LBGA

Sector Size :

128K

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PBGA-B64

Memory Size :

1Gb 128M x 8

Alternate Memory Width :

8

Supply Voltage-Min (Vsup) :

3V

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Memory Interface :

Parallel

JESD-609 Code :

e1

Write Cycle Time - Word, Page :

110ns

Data Polling :

yes

Surface Mount :

yes

Qualification Status :

Not Qualified

Power Supplies :

3.3V

Operating Temperature :

-40°C~85°C TA

Programming Voltage :

3V

Terminal Pitch :

1mm

Mounting Type :

Surface Mount

Organization :

1GX1

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage-Max (Vsup) :

3.6V

Voltage - Supply :

3V~3.6V

Common Flash Interface :

yes

ECCN Code :

3A991.B.1.A

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Supply Voltage :

3.3V

Peak Reflow Temperature (Cel) :

260

Toggle Bit :

yes

Command User Interface :

yes

Published :

2015

Ready/Busy :

yes

Memory Density :

1073741824 bit

Number of Functions :

1

Number of Sectors/Size :

1k

Length :

13mm

Standby Current-Max :

0.000005A

Height Seated (Max) :

1.4mm

Packaging :

Tape and Reel (TR)

Operating Mode :

ASYNCHRONOUS

Supply Current-Max :

0.11mA

Memory Type :

Non-Volatile

Memory Width :

1

Number of Terminations :

64

Width :

11mm

Access Time (Max) :

110 ns

Series :

GL-P