S29GL01GP11TFIR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Density :

8 b

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Sync/Async :

ASYNCHRONOUS

Toggle Bit :

yes

JESD-609 Code :

e3

Power Supplies :

3.3V

Programming Voltage :

3V

HTS Code :

8542.32.00.51

Supply Voltage-Min (Vsup) :

3V

Lead Free :

Lead Free

Number of Terminations :

56

Write Cycle Time - Word, Page :

110ns

Length :

18.4mm

Access Time (Max) :

110 ns

Mount :

Surface Mount

Standby Current-Max :

0.000005A

Command User Interface :

yes

Organization :

1GX1

Nominal Supply Current :

110mA

Published :

2010

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

ECCN Code :

3A991.B.1.A

Ready/Busy :

yes

Data Polling :

yes

Page Size :

8/16words

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Supply Voltage-Max (Vsup) :

3.6V

Height Seated (Max) :

1.2mm

Number of Sectors/Size :

1k

Sector Size :

128K

Memory Format :

Flash

Terminal Pitch :

0.5mm

Voltage - Supply :

3V~3.6V

Terminal Position :

Dual

Packaging :

Tray

Memory Width :

1

Supply Voltage :

3.3V

Memory Interface :

Parallel

Terminal Finish :

Matte Tin (Sn)

Common Flash Interface :

yes

Series :

GL-P

Number of Pins :

56

Time@Peak Reflow Temperature-Max (s) :

40

Number of Functions :

1

Alternate Memory Width :

8

Data Bus Width :

8B

Memory Type :

Non-Volatile

Memory Size :

1Gb 128M x 8

Operating Temperature :

-40°C~85°C TA