S29GL01GP11TFIR10

Manufacturer :

Infineon Technologies

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Supply Voltage-Min (Vsup) :

3V

Data Polling :

yes

Memory Format :

Flash

Radiation Hardening :

No

Page Size :

8/16words

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Voltage - Supply :

3V~3.6V

Common Flash Interface :

yes

Organization :

1GX1

Memory Type :

Non-Volatile

Data Bus Width :

8B

HTS Code :

8542.32.00.51

Packaging :

Tray

Terminal Finish :

Matte Tin (Sn)

Published :

2010

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Number of Sectors/Size :

1k

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage-Max (Vsup) :

3.6V

Density :

8 b

Terminal Pitch :

0.5mm

Terminal Position :

Dual

JESD-609 Code :

e3

Write Cycle Time - Word, Page :

110ns

Nominal Supply Current :

110mA

Ready/Busy :

yes

Mount :

Surface Mount

Operating Temperature :

-40°C~85°C TA

Programming Voltage :

3V

Memory Size :

1Gb 128M x 8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

3A991.B.1.A

Power Supplies :

3.3V

Lead Free :

Lead Free

Standby Current-Max :

0.000005A

Number of Terminations :

56

Height Seated (Max) :

1.2mm

Access Time (Max) :

110 ns

Command User Interface :

yes

Alternate Memory Width :

8

Sector Size :

128K

Number of Pins :

56

Length :

18.4mm

Sync/Async :

ASYNCHRONOUS

Peak Reflow Temperature (Cel) :

260

Toggle Bit :

yes

REACH SVHC :

No SVHC

Supply Voltage :

3.3V

Series :

GL-P

Memory Width :

1