S29GL032N11TFIV13

Manufacturer :

Infineon Technologies

Product Category :

Memory

Voltage - Supply :

1.65V~3.6V

Organization :

2MX16

Memory Interface :

Parallel

Common Flash Interface :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Non-Volatile

Qualification Status :

Not Qualified

Boot Block :

BOTTOM/TOP

Package / Case :

56-TFSOP (0.724, 18.40mm Width)

Number of Sectors/Size :

64

Alternate Memory Width :

8

Packaging :

Tape and Reel (TR)

Operating Mode :

ASYNCHRONOUS

Length :

18.4mm

Supply Voltage :

3V

Memory Density :

33554432 bit

HTS Code :

8542.32.00.51

Programming Voltage :

3V

Number of Functions :

1

Memory Width :

16

Supply Voltage-Max (Vsup) :

3.6V

Page Size :

8/16words

Mounting Type :

Surface Mount

Ready/Busy :

yes

Memory Size :

32Mb 4M x 8 2M x 16

Factory Lead Time :

18 Weeks

Terminal Pitch :

0.5mm

Series :

GL-N

Published :

2015

Number of Terminations :

56

Operating Temperature :

-40°C~85°C TA

Standby Current-Max :

0.000005A

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Toggle Bit :

yes

JESD-609 Code :

e3

Sector Size :

64K

Write Cycle Time - Word, Page :

110ns

Data Polling :

yes

Width :

14mm

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.2mm

Terminal Finish :

MATTE TIN

Supply Current-Max :

0.05mA

Memory Format :

Flash

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G56

Power Supplies :

1.8/3.33/3.3V

ECCN Code :

3A991.B.1.A

Command User Interface :

yes

Access Time (Max) :

110 ns

Supply Voltage-Min (Vsup) :

2.7V

Terminal Position :

Dual