S29GL032N11FFIV10

Manufacturer :

Infineon Technologies

Product Category :

Memory

Series :

GL-N

Supply Voltage-Min (Vsup) :

2.7V

Number of Pins :

64

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Boot Block :

BOTTOM/TOP

Factory Lead Time :

16 Weeks

Alternate Memory Width :

8

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

JESD-609 Code :

e1

Length :

13mm

Programming Voltage :

3V

Ready/Busy :

yes

Width :

11mm

Memory Format :

Flash

Number of Sectors/Size :

64

Operating Mode :

ASYNCHRONOUS

Memory Type :

Non-Volatile

Package / Case :

64-LBGA

Voltage - Supply :

1.65V~3.6V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tray

Data Polling :

yes

Height Seated (Max) :

1.4mm

HTS Code :

8542.32.00.51

Sector Size :

64K

Power Supplies :

1.8/3.33/3.3V

Write Cycle Time - Word, Page :

110ns

Operating Temperature :

-40°C~85°C TA

Published :

2003

Command User Interface :

yes

Access Time (Max) :

110 ns

Memory Width :

16

Qualification Status :

Not Qualified

Page Size :

8/16words

Supply Voltage-Max (Vsup) :

3.6V

Number of Terminations :

64

Standby Current-Max :

0.000005A

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Toggle Bit :

yes

Supply Current-Max :

0.05mA

Terminal Pitch :

1mm

Organization :

2MX16

Peak Reflow Temperature (Cel) :

260

Terminal Position :

BOTTOM

Supply Voltage :

3V

Common Flash Interface :

yes

Memory Size :

32Mb 4M x 8 2M x 16

Memory Density :

33554432 bit