RUM003N02T2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Turn On Delay Time :

5 ns

Terminal Position :

Dual

Transistor Application :

SWITCHING

Pbfree Code :

yes

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Package / Case :

SOT-723

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Power Dissipation :

150mW

Resistance :

1Ohm

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

300mA

REACH SVHC :

No SVHC

Radiation Hardening :

No

Threshold Voltage :

300mV

Turn-Off Delay Time :

15 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1 Ω @ 300mA, 4V

Number of Elements :

1

Mount :

Surface Mount

Published :

2008

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 1mA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

150mW Ta

Vgs (Max) :

±8V

Pin Count :

3

Drain to Source Breakdown Voltage :

20V