RUM001L02T2CL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 100mA, 4.5V

Terminal Position :

Dual

Turn-Off Delay Time :

20 ns

Contact Plating :

Tin

Height :

550μm

Input Capacitance (Ciss) (Max) @ Vds :

7.1pF @ 10V

Packaging :

Cut Tape (CT)

Operating Temperature :

150°C TJ

Fall Time (Typ) :

38 ns

Continuous Drain Current (ID) :

100mA

Number of Channels :

1

Drain-source On Resistance-Max :

4.2Ohm

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Published :

2012

Rise Time :

4ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Number of Terminations :

3

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Vgs (Max) :

±8V

Mount :

Surface Mount

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Package / Case :

SOT-723

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Vgs(th) (Max) @ Id :

1V @ 100µA

Power Dissipation :

150mW

Power Dissipation-Max :

150mW Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant