RT1E050RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

30V

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Rds On (Max) @ Id, Vgs :

36m Ω @ 5A, 10V

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

20A

Continuous Drain Current (ID) :

5A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Power Dissipation-Max :

1.25W Ta

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Number of Terminations :

8

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Peak Reflow Temperature (Cel) :

260

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Current - Continuous Drain (Id) @ 25°C :

5A Ta

JESD-30 Code :

R-PDSO-F8

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.036Ohm

Pin Count :

8

Vgs (Max) :

±20V

Terminal Position :

Dual