RT1E040RPTR

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Mfr.Part #
RT1E040RPTR
Manufacturer
ROHM Semiconductor
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
MOSFET P-CH 30V 4A 8TSST
Stock
25,006
In Stock :
25,006

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Pin Count :
8
Continuous Drain Current (ID) :
4A
JESD-30 Code :
R-PDSO-F8
Operating Temperature :
150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
10 Weeks
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Rds On (Max) @ Id, Vgs :
45m Ω @ 4A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.045Ohm
Vgs(th) (Max) @ Id :
2.5V @ 1mA
FET Type :
P-Channel
Reach Compliance Code :
not_compliant
Mount :
Surface Mount
Power Dissipation-Max :
550mW Ta
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
4A Ta
DS Breakdown Voltage-Min :
30V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
16A
Number of Terminations :
8
Qualification Status :
Not Qualified
Terminal Position :
Dual
Package / Case :
8-SMD, Flat Lead
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
4A
Packaging :
Cut Tape (CT)
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
RT1E040RPTR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RT1E040RPTR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:8, Package / Case:8-SMD, Flat Lead, Mounting Type:Surface Mount, RT1E040RPTR pinout, RT1E040RPTR datasheet PDF, RT1E040RPTR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RT1E040RPTR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RT1E040RPTR


P-Channel Cut Tape (CT) 45m Ω @ 4A, 10V ±20V 1000pF @ 10V 20nC @ 10V 30V 8-SMD, Flat Lead

RT1E040RPTR Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1000pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 16A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.

RT1E040RPTR Features


a continuous drain current (ID) of 4A
based on its rated peak drain current 16A.
a 30V drain to source voltage (Vdss)


RT1E040RPTR Applications


There are a lot of ROHM Semiconductor
RT1E040RPTR applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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