RT1A060APTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.019Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Published :

2012

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 1mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 6V

Drain Current-Max (Abs) (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

JESD-30 Code :

R-PDSO-F8

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6A

Pin Count :

8

Drain to Source Voltage (Vdss) :

12V

Package / Case :

8-SMD, Flat Lead

Number of Elements :

1

Mounting Type :

Surface Mount

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Rds On (Max) @ Id, Vgs :

19m Ω @ 6A, 4.5V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 4.5V

Reach Compliance Code :

not_compliant

Vgs (Max) :

-8V

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Power Dissipation-Max :

600mW Ta

DS Breakdown Voltage-Min :

12V