RT1A050ZPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Resistance :

96mOhm

Pin Count :

8

FET Type :

P-Channel

Mounting Type :

Surface Mount

Terminal Finish :

TIN COPPER

Power Dissipation-Max :

600mW Ta

JESD-609 Code :

e2

Mount :

Surface Mount

Vgs (Max) :

±10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

26m Ω @ 5A, 4.5V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

5A

Power Dissipation :

1.25W

Pulsed Drain Current-Max (IDM) :

20A

Gate to Source Voltage (Vgs) :

10V

Number of Pins :

8

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Rise Time :

95ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

1V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-12V

Published :

2009

Turn-Off Delay Time :

410 ns

Fall Time (Typ) :

220 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

12V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Position :

Dual

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 6V

Operating Mode :

ENHANCEMENT MODE