RSR025P03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Power Dissipation :

1W

Rise Time :

10ns

Published :

2008

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Current Rating :

-2.5A

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

1W Ta

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Pbfree Code :

yes

Terminal Form :

Gull wing

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Pin Count :

3

ECCN Code :

EAR99

Number of Pins :

3

Vgs (Max) :

±20V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

98m Ω @ 2.5A, 10V

Package / Case :

SC-96

Turn-Off Delay Time :

42 ns

Fall Time (Typ) :

10 ns

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 5V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Resistance :

160mOhm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Voltage - Rated DC :

-30V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.5A