RSR025N03TL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Pbfree Code :

yes

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

70m Ω @ 2.5A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Nominal Vgs :

2.5 V

Number of Pins :

3

Pin Count :

3

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Operating Temperature :

150°C TJ

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

2.5A

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Fall Time (Typ) :

5 ns

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Power Dissipation :

1W

REACH SVHC :

No SVHC

Voltage - Rated DC :

30V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Turn-Off Delay Time :

20 ns

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 10V

Dual Supply Voltage :

30V

Threshold Voltage :

2.5V

Mount :

Surface Mount

Published :

2006

JESD-609 Code :

e1

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Continuous Drain Current (ID) :

2.5A

Element Configuration :

Single

Resistance :

118mOhm

Package / Case :

SC-96

Power Dissipation-Max :

1W Ta

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 5V