RSL020P03TR
- Mfr.Part #
- RSL020P03TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A TUMT6
- Stock
- 26,109
- In Stock :
- 26,109
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 1W Ta
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Min Operating Temperature :
- -55°C
- Peak Reflow Temperature (Cel) :
- 260
- Max Operating Temperature :
- 150°C
- Terminal Finish :
- TIN COPPER
- JESD-609 Code :
- e2
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- Pin Count :
- 6
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 11 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 11ns
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- -30V
- Continuous Drain Current (ID) :
- 2A
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 6-SMD, Flat Leads
- Turn-Off Delay Time :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Fall Time (Typ) :
- 11 ns
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 20 Weeks
- Published :
- 2007
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.12Ohm
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Drain Current-Max (Abs) (ID) :
- 2A
- Power Dissipation :
- 1W
- Datasheets
- RSL020P03TR

P-Channel Tape & Reel (TR) 120m Ω @ 2A, 10V ±20V 350pF @ 10V 3.9nC @ 5V 30V 6-SMD, Flat Leads
RSL020P03TR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 350pF @ 10V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=-30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).
RSL020P03TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 35 ns
a 30V drain to source voltage (Vdss)
RSL020P03TR Applications
There are a lot of ROHM Semiconductor
RSL020P03TR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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