RSL020P03FRATR
- Mfr.Part #
- RSL020P03FRATR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 2A TUMT6
- Stock
- 2,400
- In Stock :
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 1W Ta
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Series :
- Automotive, AEC-Q101
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- -2A
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 6
- Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 10V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 2A
- REACH SVHC :
- Unknown
- Package / Case :
- 6-SMD, Flat Leads
- Number of Pins :
- 6
- Drain-source On Resistance-Max :
- 0.12Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -2.5V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 5V
- Published :
- 2017
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2A, 10V
- DS Breakdown Voltage-Min :
- 30V
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 16 Weeks
- Datasheets
- RSL020P03FRATR

P-Channel Cut Tape (CT) 120m Ω @ 2A, 10V ±20V 350pF @ 10V 3.9nC @ 5V 30V 6-SMD, Flat Leads
RSL020P03FRATR Overview
The maximum input capacitance of this device is 350pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -2A.As shown in the table below, the drain current of this device is 2A.This transistor's threshold voltage is -2.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RSL020P03FRATR Features
a continuous drain current (ID) of -2A
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSL020P03FRATR Applications
There are a lot of ROHM Semiconductor
RSL020P03FRATR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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