RN2315TE85LF
- Mfr.Part #
- RN2315TE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V 0.1A USM
- Stock
- 27,241
- In Stock :
- 27,241
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Continuous Collector Current :
- -100mA
- Number of Pins :
- 3
- Max Power Dissipation :
- 100mW
- Current - Collector Cutoff (Max) :
- 500nA
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 50
- Power Dissipation :
- 100mW
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- RN231*
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Transistor Type :
- PNP - Pre-Biased
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 200MHz
- Polarity :
- PNP
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 100mA
- Resistor - Base (R1) :
- 2.2 k Ω
- Factory Lead Time :
- 12 Weeks
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 5V
- Datasheets
- RN2315TE85LF

RN2315TE85LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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