RN2301,LF

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Mfr.Part #
RN2301,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PREBIAS PNP 50V 0.1A USM
Stock
27,014
In Stock :
27,014

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Max Breakdown Voltage :
50V
Package / Case :
SC-70, SOT-323
Base Part Number :
RN230*
Frequency - Transition :
200MHz
Collector Emitter Breakdown Voltage :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 5V
Power - Max :
100mW
Current - Collector Cutoff (Max) :
500nA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistor - Emitter Base (R2) :
4.7 k Ω
Max Power Dissipation :
100mW
Packaging :
Tape and Reel (TR)
Transistor Type :
PNP - Pre-Biased
Mount :
Surface Mount
Published :
2014
Max Collector Current :
100mA
Factory Lead Time :
12 Weeks
Mounting Type :
Surface Mount
Resistor - Base (R1) :
4.7 k Ω
RoHS Status :
RoHS Compliant
Collector Emitter Voltage (VCEO) :
300mV
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Datasheets
RN2301,LF
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2301,LF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SC-70, SOT-323, Base Part Number:RN230*, Mounting Type:Surface Mount, RN2301,LF pinout, RN2301,LF datasheet PDF, RN2301,LF amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2301,LF ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN2301,LF


RN2301,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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