RN2102MFV,L3F(CT

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Mfr.Part #
RN2102MFV,L3F(CT
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Stock
15,720
In Stock :
15,720

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Mounting Type :
Surface Mount
Frequency - Transition :
250MHz
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500μA, 5mA
Resistor - Base (R1) :
10 k Ω
Factory Lead Time :
10 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Voltage - Collector Emitter Breakdown (Max) :
50V
Transistor Type :
PNP - Pre-Biased
Package / Case :
SOT-723
Resistor - Emitter Base (R2) :
10 k Ω
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA 5V
Current - Collector Cutoff (Max) :
500nA
Current - Collector (Ic) (Max) :
100mA
Power - Max :
150mW
Datasheets
RN2102MFV,L3F(CT
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2102MFV,L3F(CT from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:SOT-723, RN2102MFV,L3F(CT pinout, RN2102MFV,L3F(CT datasheet PDF, RN2102MFV,L3F(CT amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN2102MFV,L3F(CT ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation RN2102MFV,L3F(CT


RN2102MFV,L3F(CT datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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