RN1402,LF
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- Mfr.Part #
- RN1402,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 0.1A SMINI
- Stock
- 84,680
- In Stock ：
- 84,680
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Current - Collector Cutoff (Max) :
- 500nA
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Max Operating Temperature :
- 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Radiation Hardening :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Max Collector Current :
- 100mA
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- NPN - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 5V
- Number of Pins :
- 3
- Frequency - Transition :
- 250MHz
- Collector Emitter Voltage (VCEO) :
- 300mV
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2014
- Packaging :
- Tape and Reel (TR)
- Resistor - Base (R1) :
- 10 kOhms
- Supplier Device Package :
- S-MINI
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 12 Weeks
- Power - Max :
- 200mW
- Min Operating Temperature :
- -55°C
- Max Power Dissipation :
- 200mW
- Datasheets
- RN1402,LF
RN1402,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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