RN1406S,LF(D
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- Mfr.Part #
- RN1406S,LF(D
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 0.1A SMINI
- Stock
- 48,186
- In Stock ：
- 48,186
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Reach Compliance Code :
- Unknown
- Published :
- 2014
- Transition Frequency :
- 250MHz
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500nA
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Resistor - Emitter Base (R2) :
- 47 k Ω
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 300mV
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 10
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Resistor - Base (R1) :
- 4.7 k Ω
- Transistor Type :
- NPN - Pre-Biased
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Frequency - Transition :
- 250MHz
- JESD-30 Code :
- R-PDSO-G3
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- Power - Max :
- 200mW
- Datasheets
- RN1406S,LF(D
RN1406S,LF(D datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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