RN1302,LF
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- Mfr.Part #
- RN1302,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V 0.1A USM
- Stock
- 203,602
- In Stock ：
- 203,602
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Package / Case :
- SC-70, SOT-323
- Mounting Type :
- Surface Mount
- Published :
- 2014
- Weight :
- 28.009329mg
- Max Operating Temperature :
- 150°C
- Resistor - Base (R1) :
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 5V
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- USM
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 10V
- Current - Collector (Ic) (Max) :
- 100mA
- Mount :
- Surface Mount
- hFE Min :
- 50
- Length :
- 2mm
- Power - Max :
- 100mW
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 1.25mm
- Transistor Type :
- NPN - Pre-Biased
- Factory Lead Time :
- 12 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- RoHS Compliant
- Continuous Collector Current :
- 100mA
- Min Operating Temperature :
- -55°C
- Current - Collector Cutoff (Max) :
- 500nA
- Max Power Dissipation :
- 100mW
- Polarity :
- NPN
- Resistor - Emitter Base (R2) :
- 10 kOhms
- Height :
- 900μm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Frequency - Transition :
- 250MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- RN1302,LF
RN1302,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at
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