RD3U080CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

4.67 mJ

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

300m Ω @ 4A, 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Power Dissipation-Max :

85W Tc

Vgs(th) (Max) @ Id :

5V @ 1mA

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

250V

Drain to Source Voltage (Vdss) :

250V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 25V

Pulsed Drain Current-Max (IDM) :

32A

Vgs (Max) :

±30V

Number of Elements :

1

Surface Mount :

yes

Number of Terminations :

2

Drain-source On Resistance-Max :

0.3Ohm

Drain Current-Max (Abs) (ID) :

8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON