RD3U040CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

16A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

29W Tc

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 2A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

250V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

1.61 mJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Factory Lead Time :

16 Weeks

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

DS Breakdown Voltage-Min :

250V