RD3S100CNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

DS Breakdown Voltage-Min :

190V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

40A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

190V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

10A

Avalanche Energy Rating (Eas) :

8.33 mJ

Power Dissipation-Max :

85W Tc

Terminal Position :

Single

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

182m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.19Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V