RD3S100AAFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-Source On-Volt :

190(V)

Package :

Digi-Reel?

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Mounting :

Surface Mount

Maximum Operating Temperature :

+ 150 C

Operating Temperature Classification :

Military

Package Type :

DPAK

MSL :

-

Drain to Source Voltage (Vdss) :

190 V

Continuous Drain Current :

10(A)

Pin Count :

2 +Tab

Power Dissipation :

85(W)

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Subcategory :

MOSFETs

Number of Elements :

1

Product Type :

MOSFET

Type :

Power MOSFET

Rise Time :

20 ns

Product Status :

Active

Rad Hardened :

No

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Supplier Device Package :

TO-252

Rds On (Max) @ Id, Vgs :

182mOhm @ 5A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

Base Product Number :

RD3S100

Packaging :

Cut Tape

Power Dissipation (Max) :

85W (Tc)

Qualification :

AEC-Q101

Operating Temperature :

150°C (TJ)

Continuous Drain Current Id :

10A

Series :

Automotive, AEC-Q101

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Operating Temp Range :

-55C to 150C

RoHS :

Details

Current - Continuous Drain (Id) @ 25°C :

10A (Tc)

Polarity :

N

Gate-Source Voltage (Max) :

±20(V)

Gate Charge (Qg) (Max) @ Vgs :

52 nC @ 10 V

Manufacturer :

Rohm Semiconductor

FET Feature :

-

Mounting Style :

SMD/SMT

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Channel Type :

N Channel

FET Type :

N-Channel

Brand :

Rohm Semiconductor

Vgs (Max) :

±20V