RD3P200SNFRATL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

20W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

72 mJ

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.05Ohm

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

20A

Pulsed Drain Current-Max (IDM) :

80A

Number of Terminations :

2

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

46m Ω @ 20A, 10V

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 25V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Transistor Element Material :

SILICON