RD3P050SNTL1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5A Ta

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

5A

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

100V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

20A

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Terminal Form :

Gull wing

Surface Mount :

yes

Power Dissipation-Max :

15W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Terminal Position :

Single

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.205Ohm

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Rds On (Max) @ Id, Vgs :

190m Ω @ 5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1