QSZ1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Pin Count :

5

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

Transistor Type :

NPN, PNP (Emitter Coupled)

Radiation Hardening :

No

Published :

2004

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

2A

Gain Bandwidth Product :

360MHz

Number of Terminations :

5

Transition Frequency :

360MHz

Packaging :

Tape and Reel (TR)

Number of Pins :

5

Collector Emitter Breakdown Voltage :

15V

Max Power Dissipation :

1.25W

Power - Max :

500mW

Factory Lead Time :

52 Weeks

Terminal Finish :

TIN SILVER COPPER

Collector Base Voltage (VCBO) :

15V

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Element Configuration :

Dual

Transistor Application :

SWITCHING

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

2A

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Number of Elements :

2

Lead Free :

Lead Free

ECCN Code :

EAR99