QSX8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

NPN

hFE Min :

270

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Factory Lead Time :

20 Weeks

Collector Emitter Saturation Voltage :

120mV

Transistor Type :

2 NPN (Dual)

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Pin Count :

6

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

30V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transition Frequency :

320MHz

Mounting Type :

Surface Mount

Max Collector Current :

1A

Emitter Base Voltage (VEBO) :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Base Part Number :

QSX

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Max Power Dissipation :

1.25W

Lead Free :

Lead Free

Number of Terminations :

6

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

30V

Pbfree Code :

yes

Number of Pins :

6

Gain Bandwidth Product :

320MHz

Continuous Collector Current :

1A