QST8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

hFE Min :

270

Pin Count :

6

Radiation Hardening :

No

Max Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

ECCN Code :

EAR99

Power - Max :

1.25W

Lead Free :

Lead Free

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

-6V

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

QST

Terminal Form :

Gull wing

Gain Bandwidth Product :

400MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Max Collector Current :

1.5A

Collector Emitter Voltage (VCEO) :

200mV

Transistor Application :

AMPLIFIER

Max Power Dissipation :

1.25W

Transition Frequency :

400MHz

Collector Emitter Breakdown Voltage :

12V

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

-85mV

Mount :

Surface Mount

Polarity :

PNP

Number of Pins :

6

Number of Elements :

2

Pbfree Code :

yes

Continuous Collector Current :

-1.5A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2004

Factory Lead Time :

20 Weeks

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Collector Base Voltage (VCBO) :

-15V

Transistor Type :

2 PNP (Dual)