QST8TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Polarity :

PNP

Collector Emitter Breakdown Voltage :

12V

Mount :

Surface Mount

Max Breakdown Voltage :

12V

Gain Bandwidth Product :

400MHz

Power - Max :

1.25W

Pin Count :

6

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-6V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Max Collector Current :

1.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

200mV @ 25mA, 500mA

Transistor Application :

AMPLIFIER

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material :

SILICON

Element Configuration :

Dual

Factory Lead Time :

20 Weeks

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Collector Emitter Voltage (VCEO) :

200mV

Terminal Form :

Gull wing

Number of Terminations :

6

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-1.5A

Transition Frequency :

400MHz

Peak Reflow Temperature (Cel) :

260

hFE Min :

270

Collector Base Voltage (VCBO) :

-15V

JESD-609 Code :

e1

Published :

2004

Collector Emitter Saturation Voltage :

-85mV

Number of Pins :

6

Max Power Dissipation :

1.25W

Transistor Type :

2 PNP (Dual)

Base Part Number :

QST

Radiation Hardening :

No