QS6K21TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Radiation Hardening :

No

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1A

Drain to Source Breakdown Voltage :

45V

Turn On Delay Time :

6 ns

JESD-609 Code :

e1

FET Type :

2 N-Channel (Dual)

Drain to Source Resistance :

300mOhm

Drain Current-Max (Abs) (ID) :

1A

Turn-Off Delay Time :

16 ns

Gate to Source Voltage (Vgs) :

12V

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

45V

Pin Count :

6

Number of Terminations :

6

Power Dissipation :

1.25W

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Standard

Element Configuration :

Dual

Mount :

Surface Mount

ECCN Code :

EAR99

Base Part Number :

*K21

Terminal Form :

Gull wing

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Max Power Dissipation :

1.25W

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Number of Elements :

2

Fall Time (Typ) :

8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

6