QS5Y1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Max Power Dissipation :

1.25W

Max Collector Current :

3A

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

ECCN Code :

EAR99

Max Breakdown Voltage :

30V

Factory Lead Time :

20 Weeks

Pin Count :

5

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Number of Elements :

2

Published :

2011

Current - Collector Cutoff (Max) :

1μA ICBO

Terminal Position :

Dual

Transistor Element Material :

SILICON

Configuration :

COMMON EMITTER, 2 ELEMENTS

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Frequency - Transition :

300MHz 270MHz

JESD-30 Code :

R-PDSO-G5

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

400mV

Power - Max :

1.25W

Terminal Form :

Gull wing

Transistor Type :

NPN, PNP (Emitter Coupled)

Packaging :

Cut Tape (CT)

Transition Frequency :

270MHz

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN AND PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)