QS5W1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.25W

Pin Count :

5

JESD-30 Code :

R-PDSO-G5

Published :

2011

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

30V

Operating Temperature :

150°C TJ

Max Breakdown Voltage :

30V

Configuration :

COMMON EMITTER, 2 ELEMENTS

Frequency - Transition :

270MHz

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

400mV

Max Collector Current :

3A

Mount :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminations :

5

Pbfree Code :

yes

Number of Elements :

2

Current - Collector Cutoff (Max) :

1μA ICBO

Factory Lead Time :

20 Weeks

Polarity/Channel Type :

NPN

Power - Max :

1.25W

Qualification Status :

Not Qualified

Transition Frequency :

270MHz

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Transistor Type :

2 NPN (Dual) Common Emitter

Package / Case :

SOT-23-5 Thin, TSOT-23-5