QS5W1TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

20 Weeks

Transistor Type :

2 NPN (Dual) Common Emitter

Transistor Application :

SWITCHING

Configuration :

COMMON EMITTER, 2 ELEMENTS

Operating Temperature :

150°C TJ

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

1.25W

ECCN Code :

EAR99

Transition Frequency :

270MHz

Number of Terminations :

5

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G5

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

400mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

30V

Power - Max :

1.25W

Pin Count :

5

Terminal Form :

Gull wing

Published :

2011

Frequency - Transition :

270MHz

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA ICBO

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

30V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 50mA, 1A

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Pbfree Code :

yes