PSMN7R8-100PSEQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0078Ohm

Published :

2014

Reference Standard :

IEC-60134

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Pulsed Drain Current-Max (IDM) :

473A

Power Dissipation-Max :

294W Tc

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

315 mJ

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Tj

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

100A

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7110pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V