PSMN005-75B,118

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Mfr.Part #
PSMN005-75B,118
Manufacturer
Nexperia
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL TRENCHMOS SILICONMAX S
Stock
89
In Stock :
89

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Series :
TrenchMOS™
Input Capacitance (Ciss) (Max) @ Vds :
8250pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Factory Lead Time :
12 Weeks
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
500 mJ
FET Type :
N-Channel
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Terminal Form :
Gull wing
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Transistor Element Material :
SILICON
Published :
2001
Rds On (Max) @ Id, Vgs :
5m Ω @ 25A, 10V
Reach Compliance Code :
not_compliant
Drain-source On Resistance-Max :
0.005ohm
Vgs(th) (Max) @ Id :
4V @ 1mA
DS Breakdown Voltage-Min :
75V
Surface Mount :
yes
HTS Code :
8541.29.00.75
Drain Current-Max (Abs) (ID) :
75A
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
400A
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
75V
Power Dissipation-Max :
230W Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Datasheets
PSMN005-75B,118
Introducing Transistors - FETs, MOSFETs - Single Nexperia PSMN005-75B,118 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, PSMN005-75B,118 pinout, PSMN005-75B,118 datasheet PDF, PSMN005-75B,118 amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PSMN005-75B,118 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PSMN005-75B,118


N-Channel Tape & Reel (TR) 5m Ω @ 25A, 10V ±20V 8250pF @ 25V 165nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PSMN005-75B,118 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8250pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [75A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 75V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

PSMN005-75B,118 Features


the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 400A.
a 75V drain to source voltage (Vdss)


PSMN005-75B,118 Applications


There are a lot of Nexperia USA Inc.
PSMN005-75B,118 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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