PSMN005-25D,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

240A

Transistor Element Material :

SILICON

Surface Mount :

yes

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 20V

Reach Compliance Code :

Unknown

Series :

TrenchMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

DS Breakdown Voltage-Min :

25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

120 mJ

Number of Elements :

1

ECCN Code :

EAR99

Terminal Finish :

Tin

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0075Ohm

Vgs (Max) :

±15V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Power Dissipation-Max :

125W Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Pin Count :

3

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e3

Terminal Position :

Single