PSMN003-30B,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Power Dissipation-Max :

230W Tc

DS Breakdown Voltage-Min :

30V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

75A

Pulsed Drain Current-Max (IDM) :

400A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

500 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.004ohm

Published :

2001

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Finish :

Tin

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Surface Mount :

yes

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 1mA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Terminations :

2