PSMN2R6-60PSQ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

326W Tc

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Surface Mount :

No

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

58 ns

Turn-Off Delay Time :

87 ns

FET Type :

N-Channel

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

961A

Drain to Source Breakdown Voltage :

60V

Rise Time :

50ns

Terminal Position :

Single

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Max Dual Supply Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation :

326W

Mounting Type :

Through Hole

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Package / Case :

TO-220-3

Pin Count :

3

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

7629pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

150A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0026Ohm

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

411 mJ

Transistor Application :

SWITCHING

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube